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Interfacial thermal resistance of Au/SiO2 produced by sputtering method
Yibin Xu, Masahiro Goto, Yoshihisa Tanaka, Miyoko Tanaka, Masato Shimono and Masayoshi Yamazaki
Interfacial thermal resistance between sputtered Au films and SiO2 single crystal substrates produced under different sputtering conditions has been measured by 2 omega method, and compared with the calculation results of phonon acoustic mismatch model and phonon diffusion mismatch model. The interfacial thermal resistance shows strong dependence on the sputtering condition: increases with increasing of RF power, and decreases when heating the substrates above 200&Mac176;C. The minimum interfacial thermal resistance obtained by the present experiment exhibits good agreement with the theoretical prediction.