Thermal analysis of bipolar microelectronic devices
Mustafa Aydemir, Müslüm Arici and Hasan Karabay
The effect of Deep Trench Isolation (DTI) length and heat generation rate on the temperature distribution near the heat source region is investigated numerically for trench isolated devices. Computational results show that since trenches restrict to dissipate heat over the lateral sides, large temperature gradients are established in the trench isolated region which may deteriorate the performance of bipolar transistors. Sharp temperature gradients are more pronounced particularly at higher trench lengths and heat generation rates.
Keywords: Bipolar device, Deep Trench Isolation (DTI), microelectronic device, self-heating, thermal analysis, trench length