Schottky Barrier Near-Ultraviolet Photodetectors Based on ZnSe
A. Bouhdada, M. Hanzaz, F. Vigue and J.P. Faurie
In this report, we propose to model the spectral response of ZnSe-based Schottky barrier photodetector, based on the resolution of the differential equations that govern the excess carriers variation in each layer of the photodiode taking into account all physical parameters, in particular the trap levels density. The theoretical calculations are compared to experimental measurements in order to fit the minority carriers diffusion length. We have also analyzed the impact of the thickness of the intrinsic region and the n-type layer on the device bandwidth, as well as the effect of the density of the deep traps present in the forbidden band.