Study of GaAs MMIC Power Amplifier for Integrated Circuit Applications
K.F. Yarn, K.K. Wu and T.R. Chang
GaAs-based low noise amplifier operating at 2GHz frequency band has been designed for microwave application by using monolithic microwave integrated circuit (MMIC) technology. Making use of computer aided design (CAD) techniques, i.e., HP-MDS software and considering the layout rules as well as the design rules of the MMIC, the design circuit of a broadband power amplifier has been achieved. The designed single-ended one-stage MESFET amplifier exhibits a 3.07dB noise figure and 8.08dB power gain with a 3dB bandwidth of 600MHz centered at 2GHz.