Resonant Interband Tunneling in GaAs Delta-Doped In GaAs Quantum Well Structure
King-Kung Wu
In this report, a GaAs Schottky-i-d(n+)-i-Schottky structure with negative differential resistance (NDR) phenomenon is analyzed by Airy function approach. The influence of barrier width, delta-doping concentration, applied bias and temperature are also investigated. Based on the simulation of the delta-doping structure, it will supply a conceptual understanding in designing GaAs delta-doped resonant tunneling NDR devices.