Effective Control of Threshold Voltage of MOS Transistors
This paper presents methods for effective control of threshold voltage of MOS transistors. Threshold voltage is one of the key parameters of a MOSFET device. In this paper, dependence of the threshold voltage of a MOS transistor is analyzed and effective methods for its control are discussed. Methods for effective control of threshold voltage of MOS transistors are verified through the layout design and simulation of an nMOS transistor in 45nm CMOS technology at a temperature of 270C and supply voltage (VDD) of 0.40V. All simulations are performed by using Microwind ver. 3.1 EDA tool and using BSIM4 MOS parameter model.
Keywords: Threshold voltage, power dissipation, switching speed, temperature, performance, substrate bias.