Noise Performance of 94 GHz Multiple Quantum Well Double-Drift Region IMPATT Sources
Monisha Ghosh, Somrita Ghosh, Prasit Kumar Bandyopadhyay, Arindam Biswas, A.K. Bhattacharjee and Aritraacharyya
Noise due to the avalanche multiplication of charge carriers is the major limiting factor for determining the high frequency properties of impact avalanche transit time (IMPATT) sources. The noise level in IMPATT diodes are major concerning factor espetially at millimeter-wave (mmwave) frequency regime where the power out of the device reduces in the order of few hundred milliwatts. In the present work, the noise properties of different multiple quantum well (MQW) double-drift region (DDR) IMPATT structures based on Si~3C-SiC material system have been studied. The simulation study shows that those MQW diodes are able to produce considerably greater power with significantly less noise level at W-band (75 – 110 GHz) with contrast to their flat DDR Si counterpart.
Keywords: 3C-SiC, Avalanche Noise, Multiple Quantum Well, Noise Measure, Noise Spectral Density