An 8T SRAM Cell with Improved ION/IOFF Ratio and with Faster Read Speed
Abhinandan Goswami, Amit Singh Rajput and Nikhil Sxena
Fast speed of read operation and stability is the general need of memory device, SRAM read stability can be achieved by keeping high ION/IOFF ratio. In this paper we propose a 8T SRAM Cell that results in reduction of Read delay and increase the ION/IOFF ratio at the same time in comparison with conventional 6T SRAM Cell and 7T SRAM Cell at the cost of leakage power. This paper is aimed to increase ION/IOFF ratio while keeping the faster Read speed.