Electron Trap Generation in n-MOSFETs Under Low Field Electrons Injection
Idrees S. Al-Kofahi
The reliability of n-channel MOSFETs during substrate hot electron injection is studied. The technologically important low field case (Eox < 2 MV/cm) is considered here in some detail. Results show that detrapping of previously trapped electrons and electron trap generation should be taken into account in order to explain the observed dependence of oxide bulk trap charging on injection current density during substrate electron injection.