Analyses of GaAs/InGaAs/AlGaAs Real Space Transfer Devices by New Modified Model
Heated channel electrons of real space transfer devices are well-known by the modulation of drain-to-source electrical field and then become hot electrons injected into the substrate controlled by the substrate bias. In this report, a hot electron temperature model is used to simulate the characteristics of real space transfer (RST) devices. The newly modified model is derived to make the conventional RST model be well-established in the final breakdown region. Calculations not only offer a reasonable simulation but also a good understanding to the offset voltage of the drain current. In addition, a dual InGaAs channel RST is fabricated and demonstrated. From experiments, it is found that excellent RST characteristics have been obtained and the I-V trends are quite consistent to those of theoretical analyses.