Switched Current Memory Cell Using Floating Gate MOSFET
Maneesha Gupta and Rahul Suri
An implementation of switched-current memory cell in floating gate MOSFETs (FGMOS) technology is presented. The sampled and hold circuit built using FGMOS based memory cell has better performance due to the increased gate to source capacitance inherent to the FGMOS technology. Noise analysis shows improved performance of the proposed memory cell over conventional memory cell. Pspice simulations have been used to validate the theoretical predictions.