An Analytical Model of Short Channel Effects in Sub-Micron MOS Devices
Ajay Kumar Singh
In the present study we have proposed a modified model for surface potential and threshold voltage of the short channel device after including the electron charge carrier density in the Poisson’s equation. We are first to consider the effect of the carrier density on the various parameters of the short channel devices. We have compared the result of our model with various published works. The validity of our model is verified my MINIMOS simulator results. We have observed that the threshold voltage as well as DIBL effect is severely affected by the charge carrier density. The longitudinal electric field of the short channel device is affected by the charge carrier density when it is operated at low drain voltage. Without any approximation we have developed an analytical model for short channel factor which shows the dependence on depletion width and drain voltage.