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Effects of Doping Concentration on Al-doped ZnO Thin Films Prepared by Pulsed Laser Deposition (PLD)
Y-D. Liu, D. Ai, X-Y. Shi and J. Xing

Al-doped zinc oxide (AZO) thin films have been prepared by pulsed laser deposition (PLD). The structural, electrical and optical properties of these films were investigated as a function of Al-doping amount (0 to 7 wt%) in the target. Films were deposited at a low substrate temperature of 100ºC under 10 Pa of oxygen pressure. It was observed that 3wt% of Al is the optimum doping amount in the target to achieve the minimum film resistivity.

Keywords: Al-doped ZnO, thin films, pulsed laser deposition (PLD), carrier concentration, optical properties

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