Characteristic Analysis of 532 Nm Millisecond Pulse Laser-Induced Surface Damage in the Shape Of Thermal Decomposition to Gaas By Means of a Semi-Analytical Method
J. Bi And G-B. Chen
Considering that GaAs has the characteristic of thermal decomposition, the surface damage of thermal decomposition to GaAs induced by a 532nm millisecond pulse laser is studied using heat conduction theory and semi-analytical method. Two-dimensional axisymmetric modelling is established. Expressions of Gaussian laser beam-induced transient temperature field and surface damage threshold of thermal decomposition are given. The transient temperature distributions and the damage threshold of thermal decomposition with different absorption rates are simulated. Results show that the higher absorption rate causes the higher temperature rise on the material surface, but the desired damage threshold of thermal decomposition is lower. Increasing the laser energy density, the surface damage of thermal decomposition occurs more early. The conclusions of this paper have the guidance significance and practical value for the study of laser interaction with GaAs and the damage mechanism.
Keywords: 532 nm, millisecond pulse laser, GaAs, laser-induced damage, thermal decomposition, semi-analytical method, finite element method (FEM)