Impact of Buffer Length on the Analog Performance and Efficiency of Normally-Off Underlapped Double Gate AlGaN/GaN MOS-HEMT Device
Debarati Sarkar, Angshuman Majumdar and Arighna Basak
Conventional HEMTs and MOSFETs are unable to block current in the absence of gate voltage, leading to power inefficiency due to standby power consumption. This paper explores the analog characteristics of a novel Normally-Off Underlapped AlGaN/GaN-based Double Gate MOSHEMT, designed to address the off-state current issue faced by traditional devices, making it well-suited for energy-efficient applications. The study investigates how variations in gate length affect parameters such as drain current (Id), transconductance, and the transconductance generation factor. The findings reveal that increasing the buffer length improves on-state current, enhancing overall device performance. Specifically, the device with a 180 nm buffer length demonstrates a 20% higher drain current than the 170 nm devices and a 38% improvement over the 160 nm devices.
Keywords: Underlap-Double Gate, normally off, AlGaN/GaN, heterojunction, low-power applications