Thermal conductivity of SiC nanowire formed by combustion synthesis
Koji Takahashi, Yohei Ito, Tatsuya Ikuta, Takashi Nishiyama, Motoo Fujii, Xing Zhang and Andrzej Huczko
This paper reports on the measurement of the thermal conductivity of an individual silicon carbide (SiC) nanowire of 140 nm diameter. T-type nanosensor and high-resolution transmission electron microscopy (HRTEM) are applied to obtain reliable property data. HRTEM images show that this nanowire has highly-crystalline SiC core of 126 nm diameter and surrounding amorphous silicon-dioxide layer of 7 nm thickness. Thermal contact resistance is estimated by using a simple analysis of the amorphous-carbon nanostructure between nanowire and nanosensor. Obtained apparent thermal conductivity of this nanowire suggests the thermal conductivity of SiC core is over 100 W·m-1·K-1 at room temperature, which is much greater than the past-reported data of thin film but less than the pure bulk data. Compared with bulk samples, phonon scattering mechanism is also discussed.