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A Unified approach to determine the melting temperature and energy band gap variation in semiconducting nanomaterials
Monika Goyal
A simple unified empirical model is presented in this study to determine melting temperature and relative energy band gap change with size and dimension in semiconducting nanostructures. The model approach formulated by Jiang et al. to study melting temperature variation in nanomaterials is empirically extended to include the effect of solid-liquid interfacial energy, and surface stress on the thermodynamic parameter. Using this extended form, energy band gap expression for semiconducting nanostructures is proposed. The inclusion of solid-liquid interfacial energy to surface stress ratio is found to have linear impact on melting temperature and inverse impact on relative energy band gap in semiconducting nanomaterials. A decrease in the melting temperature and a sharp rise in the energy band gap of a semiconducting nanomaterial are observed as the nanostructure’s size is reduced. The proposed model results are found consistent with the available experimental and simulated data.
Keywords: melting temperature, energy band gap, solid-liquid interfacial energy, shape parameter, size
DOI: 10.32908/hthp.v55.2069