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2T1M-Based Double Memristive Crossbar Architecture for In-Memory Computing
Ioannis Vourkas, Georgios Papandroulidakis, Georgios Ch. Sirakoulis and Angel Abusleme

The recent discovery of the memristor has renewed the interest for fast arithmetic operations via high-radix numeric systems. In this direction, a conceptual solution for high-radix memristive arithmetic logic units (ALUs) was recently published. The latter combines CMOS circuitry for data processing and a reconfigurable “segmented” crossbar memory block. In this paper we build upon such a conceptual design and propose a 3D extension of the classic crossbar topology via 2T1M cross-points which still permits the parallel creation of partial products for faster multiplication with lower circuit complexity. Furthermore, we present a binary to high-radix data conversion circuit to complement the state-programming module of the previous work. A simulation-based validation of read/write multi-level memory operations from/to the 2T1M 3D memristive crossbar was performed using SPICE and a threshold-type switching model of a bipolar voltage-controlled memristor. Such realization of in-memory computations could lead to faster arithmetic algorithms in future memristive ALUs.

Keywords: Memristor, memristive system, resistive switching, nanoelectronics, crossbar, resistive random access memory, high-radix arithmetic, SPICE, parallel computing.

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