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Functional Stress Degradations on Trench MOS Transistors: Two-dimensional Simulations & Analysis
B. Beydoun, M. Zoaeter, F. Morancho and J-P Charles

Functional stress can produce some changes in some Trench MOSFET parameters. Two-dimensional numerical simulations and experimental measurements, for the pre-stressed and post-stressed component, are used to investigate the effect of this type of stress on the electrical static and dynamic characteristics of the device. Analysis based on the physics and 2-D simulations are carried out to determine the degraded parameters and explain the origin of their modifications.

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