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Analysis of GaAs Delta-Doped Resonant Tunneling Structure with Negative Resistance
King-Kung Wu

In this report, a GaAs Schottky-i-δ(n+)-i-Schottky structure with negative differential resistance (NDR) phenomenon is analyzed by Airy function approach. The influence of barrier width, delta-doping concentration, applied bias and temperature are also investigated. Based on the simulation of the delta-doping structure, it will supply a conceptual understanding in designing GaAs delta-doped resonant tunneling NDR devices.

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