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Optimization and Power Analysis of Voltage Controlled Oscillator Using FinFET Technique
Maitri Singh Kushwah and Shyam Akashe

In nanometer regime, CMOS based circuit may not be used due to complication in its fundamental material power consumption and leakage parameter. In this paper, a new high performance voltage controlled oscillator (VCO) using FinFET on new approach is presented. Fin-type-field-effect transistors (FinFET) are a novel design of MOSFET which is created on an SOI structure. The body of the transistor is etched into “fin” like structure which is wrapped by the gate on both sides and the thickness of the fin is measured in the direction from source to drain that determines the effective channel length of devices. The double gate MOSFET is a popular choice, because this structure is scalable and the short channel effects can be suppressed for a given equivalent gate oxide thickness. The voltage controlled oscillator (VCO) is the elemental factor of phase locked loop (PLL) oscillation frequency synthesis, which is mostly used in modern electronic information processing systems. A comparative analysis on design of Fin- FET based voltage controlled oscillator (VCO) has been done to work at higher frequencies, lower power dissipation and also reduce leakage current. The circuit is designed and simulated using cadence virtuoso tool using 45nm FinFET technology with 0.7V supply voltages. It is initiated that the design of FinFET based voltage controlled oscillator (VCO) is further applicable for leakage power, current and the total power in nanometer regime. The total power comes to be 1.69 which is low.

Keyword: Leakage power, FinFET, Power dissipation, Leakage current

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