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Design and Modeling of Thin Film Nichrome Resistors for GaN MMICs up to 26 GHz
Subhash Chander, Kirti Bansal, Samuder Gupta and Mridula Gupta

In this paper, thin film nichrome (NiCr) resistors have been designed and modeled based on Gallium Nitride (GaN) foundry process. The thin-film resistors have been analyzed for desired electrical performance such as sheet resistance, current density and power density. Thin-film resistors are being used in Monolithic Microwave Integrated Circuits (MMICs) such as power amplifier, switch and low noise amplifiers because of having low thermal coefficient of resistance (TCR). These resistors are designed for GaN on silicon carbide substrate for power applications. The simulation, parameter extraction and modeling has been carried out in this work for resistors ranges from 10Ω to 500Ω in the frequency range from 100MHz to 26 GHz.

Keywords: Advance design system, gallium nitride, MMIC, nichrome resistor, sheet resistance, silicon carbide, thin film

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