Carbon Nanotube Field Effect Transistors Development and Perspectives: Part 1
The present paper treats the Carbon Nanotube Field Effect Transistors (CNFETs) in terms of new development as a possible future basic element for beyond CMOS technology used in ultra high scale integration ULSI. The CNFET is studied both in physical as well as technological point of views aiming a further understanding of the limitations to high integration density.
The different types of carbon nanotubes (SWNT) and (MWNT) used for electronic and sensing devices are discussed and the limitations for a
higher integration density are evidenced. The CNFET switching characteristics and the IV characteristics are discussed to evidence the power dissipation and the switching frequency.
Keywords: Carbon Nanotubes, CNFET, Integrated Circuits, I-V Characteristics, NanoMOSFET