Current- Voltage Method for Determining the Temperature Dependence of Electron Effective Mass in β-Ga2O3
In this study we present the Current–Voltage method for determining the electron effective mass in β-Ga2O3. The reverse current voltage characteristic for Schottky barrier is used for this method at various temperatures. The determined electron effective mass depends on temperature, it decreases then increases with increasing temperature. A good agreement is found between our obtained value of electron effective mass (m∗ = 0.4m0) determined at room temperature and other values that are obtained by different methods.
Keywords: β-Ga2O3, electron effective mass, Schottky diode, I-V method, reverse current, thermionic emission, tunneling current