Performance Evolution of Different Type of 6T SRAM Cells
Mohd Saqib, Ram Chandra Singh Chauhan and Alok Ranjan
With the rapid advancement in the VLSI scaling and integration the need for the evolution of a portable, highly stable, better performing 6T-SRAM cell is in rising demand, for the same in this paper we have compared various 6T SRAM cells using different techniques like Gated VDD, and Multi- threshold CMOS design techniques employed to reduce the power consumed, CNTFET-based S-RAM cell for better SNM, delay, leakage power, and FINFET technique based 6T RAM cell for nanoscale technology for reduction in leakage power and several other comprehensive comparison is studied and reviewed and a comparative review is shown for the applications in augmented reality, artificial reality, smart homes, voice control etc.
With the complete result analysis and reported review, it has been found that to resist the static noise level the best SNM is recorded in Fin- FET with 690dB but a trade-off can be seen with it in delay of 87.91ps with 101nW power but on the other hand CNTFET’s like TG-CNTFET, GAA-CNTFET’s have low SNM of 170mV and 187.5mV respectively but shows lesser delay of 2.77ps and 5.502ps and power dissipation is also lesser in both.
Hence, it is concluded that 6T SRAM cell designed using CNTFET’s are better in speed, operation and performance.
Keywords: SRAM, SNM, CNTFET, FinFET, leakage power