Homogeneous and Heterogeneous Dual/Double Gate TFETs: Exploring High-k Materials and Thickness Variations
Chinnala Pavan Kumar, K. Sivani, Kotte Sowjanya and Busi Rambabu
Double or Dual Gate Tunnel Field Effect Transistors are considered to be one among the advanced electronic devices in the electronic industry due to their enhanced performance over the conventional MOSFETs and Single Gate Tunnel FETs in terms of ON current. This paper presents the design of Homogeneous and heterogeneous DG TFETs using varied high dielectric materials as gate oxide. This paper also presents the study of the ON current with respect to variation in oxide material and thickness. This study, from the observations reveals that the proposed heterogeneous DG TFETs show an improved performance over the presented homogeneous DG TFETs.
Keywords: High-k dielectrics, SG TFET, DG TFET, homogeneous and heterogeneous dual/double gate TFETs