Bi-dimensional Investigation on VDMOS Parameters Under Thermal Stress Effect
B. Beydoun, M. Alwan, K. Ketata and M. Zoaeter
In this paper, a two-dimensional analysis has been performed to evaluate the thermal stress effect on some VDMOS power FET’s parameters. Some modifications of physical and electrical VDMOS properties can be observed under thermal stress conditions. It is shown that the thermal stress can produce changes on several parameters such as threshold volt-age, channel mobility and saturation current of the device. In this paper, we propose theoretical and bi-dimensional analysis of parameters responsible of these modifications. The origins of these changes are pulled out based on the physics and the technological device properties.