Simulation of GaAs MESFET Characteristics
The development of microwave Gallium Arsenide Metal semiconductor Field Effect Transistors (GaAs MESFET) devices has enabled the miniaturization of cellular phones, pagers and other electronic devices. With these MESFET devices comes the need to model them.
In this work, we have extracted a small signal equivalent circuit model for a GaAs MESFET device, where the elements are directly related to the physical design parameters of the device. The model is simulated using SPICE to give the GaAs MESFET characteristics.
Keywords: GaAs devices, MESFET, Simulation, Device modelling.