A New Analytical Model of Subthreshold Swing for Cylindrical Gate (CG) Mosfets Including Effective Conducting Path (ECP)
We have developed analytical model for subthreshold swing of cylindrical gate MOSFETs using analytical solution of 2D Poisson’s equation and evanescent mode analysis. To account doping effect in subthreshold swing an effective conducting path Reff is introduced in this model. The parameter Reff presents the location of S-weighted of subthreshold conduction. By comparison with different published results, the conventional model shows an overestimation of subthreshold swing while our model reveals quantitative agreement.
Keywords: Cylindrical gate MOSFETs; Subthreshold swing; Effective conducting path (EPC).