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Low-filed Mobility Model for AlGaN/GaN HEMT
Said Fadlo and Meriem Hanzaz

A phenomenological low-filed mobility model is developed to describe the dependence of the carrier mobility on the applied gate to source bias for AlGaN/GaN High Electron Mobility Transistor. This model is used to describe direct-Current characteristic. The results show excellent agreement when compared with experimental data thereby proving the validity of the model.

Keywords: AlGaN/GaN MODFET, HEMT, low-filed mobility model.

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