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Analytical Model for Output Transfer Characteristics AlGaN/GaN Based HEMT’s
M. Hanzaz, S. Fadlo and Y. Cordier

The goal of this study is to develop a model of I-V characteristic in AlGaN/GaN HEMT’s in order to explain physical mechanism underlying electrical conduction governed by two-dimensional electron gas density in the AlGaN/GaN heterointerface.

We notice that the theoretical results are in good agreement with our experiments. The transfer characteristics are also studied for different devices. The model provides a good insight into the physical operation of the devices and led to devices optimization and performance prediction.

Keywords: AlGaN, HEMT, analytical model, 2-DEG

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