Gold-active-layer Transistor Circuits
J. Bastos and P. Stallinga
Gold-active-layer transistors have been recently reported in the literature. The device terminal characteristics show a power-law dependence of the drain current with the gate overdrive voltage. A study of the theoretical transition frequency shows that circuits realized with these devices can operate at frequencies up to three orders of magnitude higher than if realized with standard MOS transistors of similar channel length. To investigate the device application in circuit design, a simple device model was implemented in the CADENCE Spectre analog environment and a ring oscillator was simulated.
Keywords: thin-film, field-effect, transistor, TFT, gold, nanoparticle, monolayer, transition frequency, power-law, mobility