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Alternative Current Model for Studying and Characterizing MOSFETs
Ahcene Lakhlef and Arezki Benfdila

The present paper deals with the modeling of low dimensional structures for studying the degradation and aging of FET transistor used in VLSI Integrated circuits. The proposed model can be used for better understanding and studying of device reliability in the operating regions of interest. Moreover, it can be seen as a characterization tool for extracting more information on the interface SiO2, the channel and the oxide itself. The model is expressed as current versus voltage in the possible full range and meant to comply with the unified current model.

Keywords: MOSFET, Current Model, I-V Characteristic, Operating Regimes, Carrier Mobility

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