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Analysis of Deep Level Trap Effects in Transistor Lasers
A. Horri, S. Mirmoeini and R. Faez

In this paper we present an analytical model to analyze the influence of deep level traps on the static and dynamic responses of transistor laser (TL). Our analysis is based on analytically solving the continuity equation and rate equations including the effect of the deep level trap (DLT), which incorporates the virtual states as a conversion mechanism. The results of simulation show that the main characteristics of laser such as threshold current, quantum efficiency, output power, and modulation bandwidth are affected by total density of traps in the active region.

Keywords: Deep level trap (DLT), self pulsing, transistor laser (TL), quantum efficiency, threshold current, semiconductor laser

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