Nonlinear Optical Effects in Spontaneous and Stimulated Emission from Excited Two-band Intrinsic Semiconductor
Vladislav F. Cheltsov
The self-consistent spontaneous and stimulated emission from an excited intrinsic two-band semiconductor confined in a micro-cavity and coupled to a single resonance field mode has been investigated with the help of the commutation version of evolution operator method in the interaction representation [1,2,3 ]. Phonons were not introduced directly into the Hamiltonian but through the initial Fermi-Dirac distributions for electrons and holes in the bands. It has been suggested that the electron-hole subsystem is excited by an ultra-short laser pulses. For the lossless mode three self-consistent states of mode field have been found: 1) the equilibrium Bose-Einstein distribution with nonzero chemical potential for the average number of photons less than unit and negative amplification coefficient; 2) the quasi-equilibrium state with field fluctuations for the average number of photons equal to unit and negative amplification coefficient; 3) the steady growth of number of photons for zero and positive amplification coefficient.The case of damped mode has been discussed briefly.