Electro-Optical Characteristics of PIN Photodiode Under High Thermal Irradiated Fields
Abd El-Naser A. Mohamed, Mohamed M. El-Halawany and Hazem M. El-Hageen
In the present paper, they have analyzed deeply and parametrically the performance of PIN photodiodes employed in high temperature-irradiated environment. The radiation-induced photodiodes defects can modify the initial doping concentrations, creating generation-recombination centres and introducing trapping of signal charge carriers. Additionally, introduction rate of the lattice defects is thermally activated and decreases with increasing irradiation temperature as a result of annealing of the damage. The present work aims at a comparison of the behaviour of differently constructed Si and InGaAs PIN photodiodes after exposure to deferent conditions (ionizing gamma rays doses and electrons particles fluences respectively) of radiation with increasing temperature. Nonlinear relations are correlated to investigate the current-voltage and capacitance-voltage dependences based on the equivalent circuit of the PIN photodiodes where thermal and irradiation effects are considered. Thermal and irradiation effects are modelled and investigated over the practical ranges of interest. Both the ambient temperature and irradiation dose as well as the spectral power of incident light possess several effects on the electro-optical PIN photodiode characteristics (dark current, photocurrent, absorption coefficient, responsivity, quantum efficiency and directivity) and consequently SNR and BER for analog and digital optical link systems.
Keywords: Radiation effects, PIN photodiode, optoelectronics, dark current, photocurrent.