Variation of Band Offsets with Dielectric Constants at AlxGa1-xInP/GaAs Interfaces
A.J. Ekpunobi
The valence band offset at the AlxGa1-xInP/GaAs is calculated in the sp3 configuration using reformulated tight binding method. The valence band offset at the Ga0.5In0.5P/GaAs of 0.28eV is in good agreement with experimental value. Correlation of the valence band offsets at several interfaces with dielectric constants indicate an exponential decrease of valence band offset with average dielectric constants of the constituents of the heterojunction.