Preparation of Optoelectronic Devices by Mixing ZnO Nanomaterials with Semiconductors
With the potential optoelectronic applications of ZnO nanomaterials gradually attracted people’s attention, as one of the optoelectronic properties control technologies of semiconductor nanomaterials, mixed doping technology has attracted more and more attention. In this study, firstly, the preparation methods of ZnO nanomaterials with mixed doping, and the structure, appearance and optical characterization of ZnO nanomaterials with In doping were discussed and analyzed. Finally, the application of doped ZnO nanomaterials in optoelectronic devices was studied. The results show that the current and voltage characteristics of the device are relatively good when the In doping concentration is 1%, and the current and voltage characteristics of the device are relatively weak when the In doping concentration is 10%; when the In doping concentration is less than 5%, the turn-on voltage of the three devices are about 3V, and the maximum brightness is 105 cdm-2. When the In doping concentration is 10%, the turn-on voltage rises to about 5V, but the brightness is low, which reflects the performance of the device can not be improved when the concentration of In doping in ZnO:In nanoparticles is high. The current efficiency of device b increases first and then decreases with the brightness, and the maximum current efficiency is 0.37 cd/A, while the current efficiency of device a and device c changes very little. It is hoped that this study can provide some reference for the research of ZnO nanomaterials mixed doping optoelectronic devices in China.
Keywords: ZnO; nano materials, semiconductor, mixed doping, photoelectron; device