Sub-5 nm Monolayer AlN MOSFETs Performance Limit
W. A. Abdul-Hussein, Falah H. Hanoon and Lafy F. Al‑Badry
Constantly examining novel alternative materials to improve devices performance is a pressing issue in light of the scaling constraints of silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Two-dimensional (2D) aluminum nitride (AlN) with constancy under ambient settings is a suitable channel material for the next MOSFET era. Using an ab-initio quantum-transport approach, the performance of n-type sub-5 nm devices built from a monolayer (ML) 2D AlN was studied. We found the double-gated (DG) ML AlN MOSFETs with an appropriate underlap region (UL) can meet the International Technology Roadmap for Semiconductors (ITRS) targets for 2028. Remarkably, the high-performance (HP) and low-power (LP) ML AlN MOSFET devices have high on-state currents (Ion) and perform up until gate lengths (Lg) of 2 and 3 nm, respectively. Additionally, ML AlN MOSFETs are competitive when compared to other 2D MOSFETs in terms of Ion, subthreshold swing (SS), delay time (τ), and Power dissipation (PDP). Therefore, Moore’s law could be stretched to a sub-5 nm range with AlN channel materials.
Keywords: Quantum transport; density functional theory; 2-dimensional systems; sub-5 nm field effect transistor; Aluminum nitride, ab initio simulations.