Pressure Dependence of Band Offsets in InAlAs/InP Heterostructures
Tight binding calculation of valence band offset (VBO) at the In0.52Al0.48 As/InP heterojunction is done using recently reformulated method. The VBO value of 0.14eV is obtained in good agreement with experiments and self-consistent calculations. A model for calculating the pressure dependence of valence band offset is presented. The model result for In0.52Al0.48As/InP material system is 0.45meV/bar in excellent agreement with experiments.