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Temperature Dependence of Band Offsets at the Porous – Silicon/Crystilline-Silicon Heterojunction
A.J. Ekpunobi

The temperature dependence of band offsets at the porous – silicon/crystalline – silicon material system has been studied within the framework of tight binding method. A model was deviced in terms of interatomic matrix element and linear expansivity. The model result of 0.0010eV/K at 300K is in good agreement with the experiment.

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